Two-dimensional Electron Gas Research Articles

Influence of the electron density on the giant negative magnetoresistance in two-dimensional electron gases

variation of the electron density via a metallic gate can control the disorder potentials in two-dimensional electron gases (2DEGs). This also influences the negative magnetoresistance at low magnetic fields, which is commonly observed in ultrahigh mobility 2DEGs. We investigate the temperature-dependent giant negative magnetoresistance (GNMR) as a function of the electron density for several temperatures and currents. Thereby, we find that the GNMR behavior depends decisively on the electron density. This observation is attributed to a changed disorder potential with electron density. In the case of higher electron densities, a nonlinear current dependency of the GNMR is observed, which could be described within the hydrodynamic regime. Published by the American Physical Society 2024

Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs

Metamaterial absorbers allow electromagnetic waves to be converted into heat energy based on impedance matching. However, passive metamaterial absorbers exhibit fixed absorption characteristics, limiting their flexibility. This work demonstrates tunable microwave and terahertz absorbers by integrating adjustable resistors into the metamaterial units. First, a microwave absorber from 1 to 5 GHz was designed by embedding PIN diodes with voltage-controlled resistance. Calculations, simulations, and measurements verified two separate absorption peaks over 90% when optimized to a resistance of 250 Ω. The absorption frequencies shifted based on the resistor tuning. Building on this, a terahertz absorber was modeled by substituting gallium nitride high electron mobility transistors (GaN HEMTs) as the adjustable resistor component. The GaN HEMTs were controlled by an integrated gate electrode to modify the two-dimensional electron gas density, allowing resistance changes without external voltage terminals. Simulations revealed two absorption peaks exceeding 90% absorption at 0.34 THz and 1.06 THz by adjusting the equivalent resistance from 180 Ω to 380 Ω, and the tunable resistance is verified by DC measurement of single GaN HEMT in the unit. This work demonstrates how integrating adjustable resistors enables dynamic control over the absorption frequencies and bandwidths of metamaterial absorbers. The proposed geometries provide blueprints for tunable microwave and terahertz absorbers.

Novel 2DEG System at the HfO2/STO Interface.

Multifunctional integration in a single device has always been a hot research topic, especially for contradictory phenomena, one of which is the coexistence of ferroelectricity and metallicity. The complex oxide heterostructures, as symmetric breaking systems, provide a great possibility to incorporate different properties. Moreover, finding a series of oxide heterostructures to achieve this goal remains as a challenge. Here, taking the advantage of different physical phenomena, we use H2 plasma to pretreat the SrTiO3 (STO) substrate and then fabricate HfO2/STO heterostructures with it. The novel, well-repeatable metallic two-dimensional electron gas (2DEG) is directly obtained at the heterointerfaces without any further complex procedures, while the obvious ferroelectric-like behavior and Rashba spin-orbit coupling are also observed. The understanding of the mechanism, as well as the modified facile preparation procedure, would be meaningful for further development of ferroelectric metal in complex oxide heterostructures.

Machine learning methods for background potential estimation in 2DEGs

Two-dimensional electron gases (2DEGs) can show exceptional carrier mobility, making them promising candidates for future quantum technologies. However, impurities and defects can significantly degrade their performance, impacting transport, conductivity, and coherence times. We leverage scanning gate microscopy (SGM) and machine learning approaches to extract the potential landscape of 2DEGs from SGM data. We compare three techniques: image-to-image translation with generative adversarial networks (GANs), cellular neural networks (CNNs), and an evolutionary search algorithm. Notably, the evolutionary approach outperforms both alternatives in defect identification and analysis. This work clarifies the interaction between defects and 2DEG properties, demonstrating the potential of machine learning for understanding and manipulating quantum materials, facilitating advancements in quantum computing and nanoelectronics.

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The results indicate that to form 2DEG in the unstrained LaGaO3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_3$$\\end{document}/BaSnO3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_3$$\\end{document} HS system, a minimum thickness of approximately 4 unit cells of LaGaO3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_3$$\\end{document} film is necessary. An increased film thickness of LaGaO3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_3$$\\end{document} is required to form the 2DEG for -3%-biaxially-strained HS system and the critical thickness is 3 unit cells for 3%-baxially-strained HS system, which is caused by the strain-induced change of the electrostatic potential in LaGaO3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_3$$\\end{document} film. In addition, the biaxial strain plays an important role in tailoring the electrical properties of 2DEG in LaGaO3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_3$$\\end{document}/BaSnO3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_3$$\\end{document} HS syestem. The interfacial charge carrier density, electron mobility and electrical conductivity can be optimized when a moderate tensile strain is applied on the BaSnO3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_3$$\\end{document} substrate in the ab-plane.

Numerical simulation of Rashba spin–orbit coupling effect on quantum Hall resistivity within tight-binding approximation

A numerical simulation of the effect of Rashba spin–orbit coupling (RSO) on quantum transport properties of electrons confined to a two-dimensional electron gas (2DEG) in the integer quantum Hall regime is presented. The mechanism of quantization and the dependence of the Hall resistivity (HR) on the system built-in and external parameters are studied using the non-equilibrium Green’s function (NEGF) technique. Relevant Green’s functions are computed numerically using spectral decomposition method in combination with recursive techniques. The tight-binding-like representation of the system Hamiltonian including magnetic field is obtained within the finite difference method, using Dirichlet boundary conditions. Corresponding formula linking the Hall resistivity with the transmission function of the system has been derived analytically within the NEGF formalism in a general form, in the sense that the formula can also be used beyond the linear response limit and for nonzero temperatures. In particular, it was shown explicitly that in the presence of the RSO coupling the even- and odd plateaus emerging in the magnetic-field dependence of the quantum Hall resistivity are related to different physical mechanisms.

Optical Shubnikov–de Haas oscillations in two-dimensional electron systems

Optical Shubnikov–de Haas oscillations in two-dimensional electron systems

Electron wave and quantum optics in graphene.

In the last decade, graphene has become an exciting platform for electron optical experiments, in some aspects superior to conventional two-dimensional electron gases (2DEGs). A major advantage, besides the ultra-large mobilities, is the fine control over the electrostatics,
which gives the possibility of realising gap-less and compact p-n interfaces with high precision. The latter host non-trivial states, \eg, snake states in moderate magnetic fields, and serve as building blocks of complex electron interferometers. Thanks to the Dirac spectrum and its non-trivial Berry phase, the internal (valley and sublattice) degrees of freedom, and the possibility to tailor the band structure using proximity effects, such interferometers open up a completely new playground based on novel device architectures. In this review, we introduce the theoretical background of graphene electron optics, fabrication methods used to realise electron-optical devices, and techniques for corresponding numerical simulations. Based on this, we give a comprehensive review of ballistic transport experiments and simple building blocks of electron optical devices both in single and bilayer graphene, highlighting the novel physics that is brought in compared to conventional 2DEGs. After describing the different magnetic field regimes in graphene p-n junctions and nanostructures, we conclude by discussing the state of the art in graphene-based Mach-Zender and Fabry-Perot interferometers.

Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition

Wurtzite AlN alloyed with group 3 elements Sc and Y boosts the performance of GaN-based high-electron-mobility transistors (HEMTs) significantly as they increase the spontaneous polarization of the barrier layer and, thus, enhance the charge carrier density ns in the two-dimensional electron gas (2DEG) formed at the interface with the GaN channel. The emerging nitride Al1−xYxN additionally features an a lattice parameter matching to that of GaN at x = 0.07–0.11, allowing for the growth of strain-free barriers. Here, we demonstrate the growth of Al1−xYxN/GaN heterostructures for HEMTs by metal–organic chemical vapor deposition for the first time. The effect of the Y concentrations on the 2DEG is investigated in a Y concentration range from 3% to 15%. At 8% Y, a record mobility of 3200 cm2/(Vs) was measured at a low temperature (7 K). Room and low-temperature ns was at 1–2 × 1013 cm−2. Al0.92Y0.08N barriers were coherently strained to the GaN channel for barrier thicknesses from 5 to 15 nm. Finally, the deposition of Al1−xYxN/GaN heterostructures deposited on 4″ 4H–SiC wafers had a room-temperature mobility close to 1400 cm2/(Vs). AlYN/GaN heterostructures may offer advantages over AlScN/GaN heterostructures not only for the lower price and higher abundance of the raw material but also in terms of electrical characteristics and may be more suitable for power amplifying applications due to increased electron mobility.

Emergent two-band conduction at Ti delta-doped LaAlO3/KTaO3 (111) heterointerface

Recently, several intriguing interfacial phenomena have been discovered at the KTaO3 (111)-based heterointerfaces, such as the two-dimensional electron gas, superconductivity, anisotropic conductivity, etc. However, the available techniques to systematically manipulate such interfacial states are quite limited. Here, we devise a delta-doping strategy by inserting a sub-nanometer Ti layer with distinct reducibilities to the LaAlO3/KTaO3 (111) interface. In the delta-doped samples, we observe an unforeseen two-band conduction, evidenced by the emergence of a new type of electron carrier with an order-of-magnitude enhancement of mobility (∼1800 cm2V−1s−1) than the original carriers. Moreover, the appearance of the high-mobility carriers causes a sharp transition between the non-Fermi-liquid superconducting state and the Fermi-liquid state with reduced spin–orbit scattering. Further evidence shows that the new type of carriers stems from another in-gap state with a shallower energy level compared to the original carriers. Our study broadens the spectrum of interfacial carrier manipulation by introducing an extra band/channel for carrier conduction, which not only opens up new possibilities in device applications but also shines a light on the underlying physics of interfacial superconductivity.

Ultrafast modulable 2DEG Huygens metasurface

Huygens metasurfaces have demonstrated remarkable potential in perfect transmission and precise wavefront modulation through the synergistic integration of electric resonance and magnetic resonance. However, prevailing active or reconfigurable Huygens metasurfaces, based on all-optical systems, encounter formidable challenges associated with the intricate control of bulk dielectric using laser equipment and the presence of residual thermal effects, leading to limitations in continuous modulation speeds. Here, we present an ultrafast electrically driven terahertz Huygens metasurface that comprises an artificial microstructure layer featuring a two-dimensional electron gas (2DEG) provided by an AlGaN/GaN heterojunction, as well as a passive microstructure layer. Through precise manipulation of the carrier concentration within the 2DEG layer, we effectively govern the current distribution on the metasurfaces, inducing variations in electromagnetic resonance modes to modulate terahertz waves. This modulation mechanism achieves high efficiency and contrast for terahertz wave manipulation. Experimental investigations demonstrate continuous modulation capabilities of up to 6 GHz, a modulation efficiency of 90%, a transmission of 91%, and a remarkable relative operating bandwidth of 55.5%. These significant advancements substantially enhance the performance of terahertz metasurface modulators. Importantly, our work not only enables efficient amplitude modulation but also introduces an approach for the development of high-speed and efficient intelligent transmissive metasurfaces.

Nonlinear helicity anomalies in the cyclotron resonance photoresistance of two-dimensional electron systems

Nonlinear helicity anomalies in the cyclotron resonance photoresistance of two-dimensional electron systems

Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces

In pursuit of understanding the mechanism of two-dimensional electron gas (2DEG), artificial heterostructures based on SrTiO3 have sparked a wealth of exciting experimental and theoretical results. However, to date, the physical origin of this phenomenon still remains controversial. In our endeavor to unravel the mystery, we have synthesized a series of LaTiO3+δ/SrTiO3 films by controlling growth temperature and oxygen pressure, respectively. X-ray absorption results identify the transition of Ti ions from Ti3+ to Ti4+. It is proved that electrical transport properties in the LaTiO3/SrTiO3 film are dominated by oxygen vacancies in SrTiO3. In addition, the metallic behavior observed in the amorphous LaTiO3/SrTiO3 film suggests contributions from growth-induced donor defects to 2DEG. Our work presents direct evidence of competing conduction mechanisms for the observed 2DEG at the LaTiO3/SrTiO3 interface and highlights the important role of oxygen diffusion from the substrate SrTiO3. Meanwhile, we emphasize the significance of LaTiO3 as an oxygen scale meter to investigate interfacial properties of oxide heterostructures.

Microscopic insights into metal diffusion and ohmic contact formation in delta-doped GaAs/(Al,Ga)As core/shell nanowires.

Semiconductor nanowires (NWs) are promising candidates for use in electronic and optoelectronic applications, offering numerous advantages over their thin film counterparts. Their performance relies heavily on the quality of the contacts to the NW, which should exhibit ohmic behavior with low resistance and should be formed in a reproducible manner. In the case of heterostructure NWs for high-mobility applications that host a two-dimensional electron gas (2DEG), ohmic contacts are particularly challenging to implement since the NW core constituting the conduction channel is away from the NW surface. We investigated contact formation to modulation-doped GaAs/(Al,Ga)As core/shell NWs using scanning transmission electron microscopy (STEM), energy dispersive X-ray spectroscopy (EDX) and electron tomography (ET) to correlate microstructure, diffusion profile and chemical composition of the NW contact region with the current-voltage (I-V) characteristics of the contacted NWs. Our results illustrate how diffusion, alloying and phase formation processes essential to the effective formation of ohmic contacts are more intricate than in planar layers, leading to reproducibility challenges even when the processing conditions are the same. We demonstrate that the NW geometry plays a crucial role in the creation of good contacts. Both ohmic and rectifying contacts were obtained under nominally identical processing conditions. Furthermore, the presence of Ge in the NW core, in the absence of Au and Ni, was found as the key factor leading to ohmic contacts. The analysis contributes to the current understanding of ohmic contact formation to heterostructure core/shell NWs offering pathways to enhance the reproducibility and further optimization of such NW contacts.&#xD.

Ultra-sensitive current bistability and light switching in a resonant tunneling superlattice transistor

Bistability in the current–voltage characteristics of semiconductor superlattices and quantum cascade laser structures has the potential for wide-ranging applications, particularly in sensing systems. However, the interdependency of applied bias and current injection in conventional two-terminal structures has led to complications in analysis and rendered the bistability phenomenon difficult to implement in practical applications. Here, we report a new kind of electronic bistability coupled to optical switching in a resonant tunneling bipolar superlattice transistor. This bistability manifests as sharp discontinuities in the collector current with extremely small variations of the applied voltage, which arise from unstable tunneling transmission across the hetero-barrier between the two-dimensional electron gas (2DEG) at the edge of the transistor base and the collector superlattice structure. The electronic transitions between high and low quantum mechanical transmissions are demonstrated to be caused by self-consistent variations of the internal electric field at the heterointerface between the 2DEG and the superlattice. They are also present in the base current of the three-terminal device and result in sharp switching of near-infrared spontaneous light emission output from an interband radiative recombination process with a peak emission wavelength of 1.58 μm. A comprehensive quantum mechanical theoretical model accounting for the self-consistent bistable tunneling transmission is in quantitative agreement with the experimental data. The measured peak transconductance sensitivity value of 6000 mS can be used in the highly sensitive detector and non-linear device applications.

Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications

In this research study, a recessed gate III-Nitride high electron mobility transistor (HEMT) grown on a lattice matched β-Ga2O3 substrate is designed. This research investigation aims to enhance DC and RF performance of AlGaN/GaN HEMT, and minimize the short-channel effects by incorporating an AlGaN back layer and field plate technique, which can enhances electron confinement in two-dimensional electron gas (2DEG). A precise comparison analysis is done on the proposed HEMT’s input characteristics, output characteristics, leakage current characteristics, breakdown voltage properties, and RF behaviour in presence and absence of AlGaN back layer in regards to field plate configuration. The inclusion of back barrier aids in raising the level of conduction band, which reduces leakage loss beneath the buffer, and aids in keeping the 2DEG to be confined to narrow channel. Furthermore, the field plate design offers an essential electric field drift between gate and drain, resulting to enhanced breakdown voltage characteristics.

Link between T-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus.

The interplay between strong Coulomb interactions and kinetic energy leads to intricate many-body competing ground states owing to quantum fluctuations in 2D electron and hole gases. However, the simultaneous observation of quantum critical phenomena in both electron and hole regimes remains elusive. Here, we utilize anisotropic black phosphorus (BP) to show density-driven metal-insulator transition with a critical conductance ∼e2/h which highlights the significant role of quantum fluctuations in both hole and electron regimes. We observe a T-linear resistivity from the deep metallic phase to the metal-insulator boundary at moderate temperatures, while it turns to Fermi liquid behavior in the deep metallic phase at low temperatures in both regimes. An analysis of the resistivity suggests that disorder-dominated transport leads to T-linear behavior in the hole regime, while in the electron regime, the T-linear resistivity results from strong Coulomb interactions, suggestive of strange-metal behavior. Successful scaling collapse of the resistivity in the T-linear region demonstrates the link between quantum criticality and the T-linear resistivity in both regimes. Our study provides compelling evidence that ambipolar BP could serve as an exciting testbed for investigating exotic states and quantum critical phenomena in hole and electron regimes of 2D semiconductors.

Boosting the Edelstein effect of two-dimensional electron gases by ferromagnetic exchange

Boosting the Edelstein effect of two-dimensional electron gases by ferromagnetic exchange

Origin of Pinning Disorder in Magnetic-Field-Induced Wigner Solids.

At low Landau level filling factors (ν), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the past three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown. Here, we present a study of the pinning mode resonance in the low-ν Wigner solid phases of a series of ultralow-disorder GaAs quantum wells which are similar except for their varying well widths d. The pinning mode frequencies f_{p} decrease strongly as d increases, with the widest well exhibiting f_{p} as low as ≃35 MHz. The amount of reduction of f_{p} with increasing d can be explained remarkably well by tails of the wave function impinging into the alloy-disordered Al_{x}Ga_{1-x}As barriers that contain the electrons. However, it is imperative that the model for the confinement and wave function includes the Coulomb repulsion in the growth direction between the electrons as they occupy the quantum well.

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application

AlGaN/GaN bilateral IMPATT device by two-dimensional electron gas for terahertz application